LOW RESISTIVITY COMPOUND REFRACTORY METAL SILICIDES WITH HIGH TEMPERATURE STABILITY

摘要

Compound refractory metal silicides are formulated to exhibit low resistivity and high temperature stability. Embodiments include various types of semiconductor devices comprising source/drain regions (15) with a compound refractory metal silicide layer (17) thereon, having a resistivity of 1 ohm.µ to 10 ohm.µ and stable at temperatures up to 1100°C.