| 摘要 |
A polycrystalline silicon TFT and its manufacturing method are provided to enhance characteristics of the transistor itself by intensifying the crystallinity of a channel region of a polycrystalline silicon thin film using an insulating layer as a heat accumulator. A polycrystalline silicon TFT includes a substrate(10), an insulating layer(20) on a portion of the substrate, a channel region(31) of a polycrystalline silicon thin film(30) on the insulating layer, source/drain regions(33,35) of the polycrystalline silicon thin film at both sides of the channel region, and a gate electrode(50) on the channel region via a gate insulating layer. The insulating layer is used as a heat accumulator in a laser irradiation process.
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