发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a structure under a pad of a semiconductor device which has a strong resistance for force in the forcing, stripping, and horizontal directions. <P>SOLUTION: The semiconductor device includes a semiconductor chip having at least one first insulating film formed on a substrate and a plurality of pads located on a layer upper than the first insulating film. A plurality of the pads on the semiconductor are arranged parallel to the predetermined chip edge portion of the semiconductor chip. The first insulating film has a reinforced pattern in the area-under-pads positioned under each pads An occupancy rate of the reinforced patterns in the first insulating film is within the predetermined range recognized in each areas-under-pads in each areas-under-pads, and the occupancy rate of the reinforced patterns in the direction vertical to the predetermined chip edge portion is more than the occupancy rate in the direction horizontal to the predetermined chip edge portion. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007142333(A) 申请公布日期 2007.06.07
申请号 JP20050337355 申请日期 2005.11.22
申请人 RENESAS TECHNOLOGY CORP 发明人 GOTO KINYA;FURUSAWA KENJI;MATSUURA MASAZUMI;MIURA NORIKO
分类号 H01L23/52;H01L21/3205 主分类号 H01L23/52
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