| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor thin film that can be manufactured at relatively low temperature, can be formed also on a bending resin substrate, and has low carrier concentration, high carrier mobility, and a large energy band gap; to provide a manufacturing method of the semiconductor thin film; and to provide a thin-film transistor that uses such a semiconductor thin film, has high field effect mobility and an on-off ratio, reduces influence by irradiation light, such as the occurrence of a leaked current, and improves element characteristics. <P>SOLUTION: An amorphous film containing zinc oxide and tin oxide is formed so that carrier density becomes≤10<SP>+17</SP>cm<SP>-3</SP>and carrier mobility becomes≥2 cm<SP>2</SP>/V sec, and an energy band gap becomes≥2.4 eV. Then, oxidation treatment is made to form a transparent semiconductor thin film 40. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
