发明名称 PHOTOMASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photomask capable of exactly projecting respective patterns having different periods. <P>SOLUTION: The photomask includes: a substrate 10 transparent for illumination light; a low-density diffraction part 57 having a plurality of low-density extinction parts 17a, 17b, 17c, 17d which are arranged in a period of at least twice the wavelength of irradiation light on the substrate 10; and a high-density diffraction part 56 having a plurality of high-density extinction parts 16a, 16b, 16c, 16d, 16e, 16f, 16g which are arranged in a period less than twice the wavelength of irradiation light on the substrate 10 and have optical characteristics different to respective ones of the low-density extinction parts 17a, 17b, 17c, 17d. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007140212(A) 申请公布日期 2007.06.07
申请号 JP20050334849 申请日期 2005.11.18
申请人 TOSHIBA CORP 发明人 FUKUHARA KAZUYA;ITO MASAMITSU;SATO TAKASHI
分类号 G03F1/32;G03F1/68 主分类号 G03F1/32
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