| 发明名称 |
Group-III nitride semiconductor device |
| 摘要 |
An object of the present invention is to provide a Group III nitride semiconductor element which comprises a thick AlGaN layer exhibiting high crystallinity and containing no cracks, and which does not include a thick GaN layer (which generally serves as a light-absorbing layer in an ultraviolet LED). The inventive Group III nitride semiconductor element comprises a substrate; a first nitride semiconductor layer composed of AlN which is provided on the substrate; a second nitride semiconductor layer composed of Al<SUB>x1</SUB>Ga<SUB>1-x1</SUB>N (0<=x1<=0.1) which is provided on the first nitride semiconductor layer; and a third nitride semiconductor layer composed of Al<SUB>x2</SUB>Ga<SUB>1-x2</SUB>N (0<x2<1 and x1+0.02<=x2) which is provided on the second nitride semiconductor layer.
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| 申请公布号 |
US2007126009(A1) |
申请公布日期 |
2007.06.07 |
| 申请号 |
US20040575625 |
申请日期 |
2004.10.13 |
| 申请人 |
SAKAI HIROMITSU;OKUYAMA MINEO |
发明人 |
SAKAI HIROMITSU;OKUYAMA MINEO |
| 分类号 |
H01L21/20;H01L21/205;H01L29/20;H01L29/205;H01L33/00;H01L33/12;H01L33/32;H01S5/02 |
主分类号 |
H01L21/20 |
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