PULSED-CONTINUOUS ETCHING

摘要

In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into an etching chamber in which a sample to be etched is disposed. The discharge of each charge of etching gas is terminated while there is a sufficient amount of etching gas remaining to support a desired flow of etching gas into the etching chamber. During discharge of at least one charge of etching gas, at least one previously discharged charges of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.