发明名称 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve the dispersion in the distribution of a color, generated from a nitride semiconductor light-emitting device which has a plurality of active layers that emit lights, having different wavelengths from each another, by controlling the layout and number of active layers. <P>SOLUTION: In a nitride semiconductor light-emitting device, having p-type and n-type nitride layers and a plurality of active layers that are formed sequentially in between the two types of nitride layers, and emit light having different wavelengths from each another; each of the plurality of active layers includes a first active layer 24, emitting at least a first wavelength light, and a second active layer 26, emitting a second wavelength light having a wavelength longer than that of the first wavelength light, with each of the first and second active layers having at least one quantum well layer and at least one quantum barrier layer that are formed alternately; the first active layer is disposed close to the p-type nitride layer as compared to with the second active layer, and the number of quantum well layers 24a of the first active layer is made smaller than the number of quantum well layers 26a of the second active layers. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007142426(A) 申请公布日期 2007.06.07
申请号 JP20060310534 申请日期 2006.11.16
申请人 SAMSUNG ELECTRO MECH CO LTD 发明人 LEE SUNG-SOOK;MIN KYEONG IK;KIM SOO HAN;KIM MIN HO
分类号 H01L33/06;H01L33/08;H01L33/32 主分类号 H01L33/06
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