摘要 |
<P>PROBLEM TO BE SOLVED: To solve the dispersion in the distribution of a color, generated from a nitride semiconductor light-emitting device which has a plurality of active layers that emit lights, having different wavelengths from each another, by controlling the layout and number of active layers. <P>SOLUTION: In a nitride semiconductor light-emitting device, having p-type and n-type nitride layers and a plurality of active layers that are formed sequentially in between the two types of nitride layers, and emit light having different wavelengths from each another; each of the plurality of active layers includes a first active layer 24, emitting at least a first wavelength light, and a second active layer 26, emitting a second wavelength light having a wavelength longer than that of the first wavelength light, with each of the first and second active layers having at least one quantum well layer and at least one quantum barrier layer that are formed alternately; the first active layer is disposed close to the p-type nitride layer as compared to with the second active layer, and the number of quantum well layers 24a of the first active layer is made smaller than the number of quantum well layers 26a of the second active layers. <P>COPYRIGHT: (C)2007,JPO&INPIT |