GALLIUM-NITRIDE-BASED LIGHT-EMITTING DIODE ELEMENT OF PERPENDICULAR STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a gallium-nitride-based LED element of perpendicular structure for maximizing the improvement effect of an external quantum efficiency and securing high-output characteristics by improving a current dispersion effect.

SOLUTION: The light-emitting element comprises an n-type bonding pad 110; an n-type reflection electrode 120 formed on the lower surface of the n-type bonding pad; an n-type transparent electrode 130 formed on the lower surface of the n-type reflection electrode; an n-type gallium nitride layer 140 formed on the lower surface of the n-type transparent electrode; an active layer 150 formed on the lower surface of the n-type gallium nitride layer; a p-type gallium nitride layer 160 formed on the lower surface of the active layer; a p-type electrode 170 that is formed on the lower surface of the p-type gallium nitride layer, and allows a surface not in contact with the p-type gallium nitride layer to have an irregular profile; a p-type reflection electrode 200 formed along the irregular surface of the p-type electrode on the lower surface of the p-type electrode; and a structure support layer 190 formed on the lower surface of the p-type reflection electrode.

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