| 摘要 |
<p>1530237 Semiconductor devices DATA GENERAL CORP 14 Feb 1977 [14 May 1976] 06112/77 Heading H1K A metal/semiconductor interface is made by forming a patterned oxide layer 602 on the surface 603 of a semiconductor substrate 601 using photoresist, passivating the exposed surface 603 against the formation of nascent oxide, by exposing it to a nitrogen plasma containing neutral nitrogen atoms, and depositing a metal on the surface 603. The substrate 601 is annealed to form the metal silicide. The metal may be Pt, Mo, Al, Ti, Rh, Pd, or W and it forms a Schottky or ohmic contact depending on the doping concentration of the substrate 601. The nitrogen atoms form a protective covering on the surface 603 and thereby prevent the formation of the nascent oxide before the metal is deposited.</p> |
