| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method that efficiently and adequately conducts irregularity formation on the surface of a semiconductor substrate, particularly a silicon substrate used for a solar cell in high tact. <P>SOLUTION: The method for manufacturing the solar cell having a step that forms irregularity by etching the surface of a poly-crystalline silicon substrate exhibiting one conductivity type while attaching an etching residue that becomes an etching mask to the surface of the substrate by a reactive ion etching process using a first etching gas; a step that removes the etching residue attached to the surface of the poly-crystalline silicon substrate after the surface roughing step; and a step that forms a diffusion layer by diffusing a semiconductor dopant exhibiting a reverse conductivity type on the front surface side of the poly-crystalline silicon substrate after the removal step. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
