| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a writing method for a nonvolatile semiconductor device which allows an electric potential difference between a source and a drain to be reduced to shorten the gate length of a memory cell. <P>SOLUTION: Hot electrons (BBHE) are induced by a band-to-band tunneling effect near the drain, so that the hot electrons are injected into a charge accumulating layer to perform the writing of bit data. A gate voltage Vg, a cell well voltage Vsub, a source voltage Vs, and a drain voltage Vd are set so as to have a relation Vg>Vsub>Vs>Vd, where (Vg-Vd) is higher than the voltage difference for generating a band-to-band tunneling current, and (Vsub-Vd) is almost equal to or higher than the barrier potential of a tunnel insulating film. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
