SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To improve microfabrication and manufacturing yield in a semiconductor device provided with an MIS transistor. SOLUTION: The semiconductor device is provided with a gate device 117, which is formed on a substrate 101 via a gate insulating film 103, and an MIS transistor, which is provided with the source region and the drain region 107b formed on both sides of the gate electrode 117 on the substrate 101. The gate electrode 117 is made of metal silicide and is provided with a first contact electrode 116, made of a metal silicide on at least either of the source region and the drain region 107b. COPYRIGHT: (C)2007,JPO&INPIT