| 摘要 |
PROBLEM TO BE SOLVED: To lower the resistance of copper wiring by suppressing the dispersion of manganese from a copper-manganese alloy layer by forming a layer for preventing the dispersion of the manganese. SOLUTION: The semiconductor device 1 has a manganese silicate layer 18 formed in such a way that the copper-manganese alloy layer 15 formed on the inside surface of a concave portion 12 formed on a silicon oxide-based insulation film 11 reacts with the silicon oxide-based insulation film 11; and a conductive layer 19 made of a material made of copper which fills the concave portion 12 and is made of copper or a material mainly containing copper. In the semiconductor device 1, a dispersion prevention layer 17 for preventing the dispersion of manganese is formed between the alloy layer 15 and the conductive layer 19. COPYRIGHT: (C)2007,JPO&INPIT
|
