| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality semiconductor device by enabling to rapidly execute processes of removing an etching mask and forming a gate insulation film at a low cost. SOLUTION: The method includes a first step of forming the etching mask (104) on a semiconductor layer (103); a second step of patterning the semiconductor layer (103) by etching via the etching mask (104); and a third step of removing the etching mask (104) by thermal processing using a thermal source of flames of a gas burner (22) using a mixed gas of hydrogen and oxygen as a fuel, and forming an oxide film (105) on the surface of the semiconductor layer (103). COPYRIGHT: (C)2007,JPO&INPIT
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