| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth apparatus for growing a group III nitride crystal having a large crystal size. SOLUTION: A reaction vessel 10 holds a mixed melt 290 of metal Na and metal Ga, and an external reaction vessel 20 covers the circumference of the vessel 10. Piping 30 is connected to the external reaction vessel 20 at the lower side of the reaction vessel 10. A suppressing/introducing plug 60 is fixed in the piping 30 at the side lower than the connection part of the vessels 10 and 20. A gas cylinder 140 supplies nitrogen gas to the piping 30 through a pressure controller 130. The suppressing/introducing plug 60 and a metal melt 190 prevent the diffusion of metal Na vapor, evaporated from mixed melt 290, into the piping 30, and supply the nitrogen gas in the piping 30 into a space 23 by the pressure difference between the spaces 23 and 31. A supporting device 50 brings a seed crystal 5 into contact with the mixed melt 290 at any time. COPYRIGHT: (C)2007,JPO&INPIT
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