| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of dominantly obtaining cubic crystals by reducing contaminated hexagonal crystals when growing the crystal of a group III element nitride semiconductor by lattice-matching with a cubic nitride semiconductor, and thus capable of simply, inexpensively producing the substrate of a gallium oxide single crystal composite for obtaining the high-purity cubic nitride semiconductor, and also to provide a method for production of a nitride semiconductor film. SOLUTION: The method of producing the gallium oxide single crystal composite comprises chemically, mechanically polishing the surface of the substrate comprising the gallium oxide single crystal, nitriding the surface with the nitrogen plasma excited by ECR or RF plasma, and then forming the gallium nitride layer comprising a cubic gallium nitride on the surface layer of the substrate. A nitride semiconductor film is obtained by growing it on the surface of the above composite. COPYRIGHT: (C)2007,JPO&INPIT
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