| 摘要 |
A semiconductor memory device includes memory cells, bit lines, source lines, and first and second voltage supply circuits. The memory cell includes a MOS transistor. The bit line connects in common drains of the MOS transistors. The source line electrically connects in common sources of the MOS transistors. The first voltage supply circuit applies voltages to the bit lines so that a first potential difference is made between the adjacent bit lines and so that a second potential difference smaller than the first potential difference is made between the bit lines adjacent to each other across the source line. The second voltage supply circuit applies voltages to the source lines so that a third potential difference larger than the second potential difference is made between the source line and bit line adjacent to each other.
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