发明名称 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR (SEMICONDUCTOR OPTICAL SENSOR)
摘要 <P>PROBLEM TO BE SOLVED: To provide an optical sensor and a method of forming the optical sensor. <P>SOLUTION: The optical sensor structure includes (a) a semiconductor substrate, (b) a first, a second, a third, a fourth, a fifth, and a sixth electrodes and (c) a first, a second, and a third semiconductor regions. The first and fourth electrodes are at a first depth. The second and fifth electrodes are at a second depth. The third and sixth electrodes are at a third depth. The first depth is deeper than the second depth, and the second depth is deeper than the third depth. The first semiconductor region, the second semiconductor region, and the third semiconductor region are laid out between the first electrode and the fourth electrode, between the second electrode and the fifth electrode, and between the third electrode and the sixth electrodes, respectively, and are in contact with the first and fourth electrodes, the second and fifth electrodes, and the third and sixth electrodes, respectively. The first semiconductor region, the second semiconductor region, and the third semiconductor region come into contact with each other. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007142416(A) 申请公布日期 2007.06.07
申请号 JP20060308607 申请日期 2006.11.15
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 KOBURGER CHARLES W III;HOLMES STEVEN J;FURUKAWA TOSHIHARU;DAVID VACLAV HORAK
分类号 H01L31/02 主分类号 H01L31/02
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