IN SITU GROWTH OF OXIDE AND SILICON LAYERS

摘要

An in-situ growth of oxide and silicon layers is provided to prevent contamination of a critical epitaxial layer by forming a protective oxide on the epitaxial layer within the same chamber. A semiconductor substrate is loaded into a cold wall chemical vapor deposition chamber designed to process one semiconductor substrate at once(100). An epitaxial layer containing silicon is formed on the substrate within the chamber(108). The epitaxial layer is exposed to oxidant source gas within the chamber. An etchant containing fluorine is introduced into the chamber to clean oxidized residue of silane in the chamber. The chemical vapor deposition chamber has total volume capacity of less than 60 liters.