| 摘要 |
A method for manufacturing a solid-state image capturing device according to the present invention, in which from a plurality of light receiving sections for photoelectrically converting incident light into signal electric charge, the signal electric charge is read to an electric charge detection section through transfer sections located under respective reading gate electrodes, each electric charge detection being shared by each of the plurality of light receiving sections, the method including: transfer section impurity region forming step of performing an ion implantation process from an ion implantation direction wherein the location of an edge surface of an impurity region of the transfer section and the location of an edge surface of the reading gate electrode corresponding to the impurity region match each other at each reading gate electrode.
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