| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To secure the coexistence of both I<2>L and high-output FET on the same substrate, by forming each region of FET in correspondence to either on region of I<2>L. |
| 申请公布号 |
JPS5434687(A) |
申请公布日期 |
1979.03.14 |
| 申请号 |
JP19770100723 |
申请日期 |
1977.08.23 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
IWASAKI HIROSHI;SASAKI YOSHITAKA;OZAWA OSAMU |
| 分类号 |
H01L21/8222;H01L21/331;H01L27/02;H01L27/06;H01L29/73;H03K19/094 |
主分类号 |
H01L21/8222 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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