SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a ferroelectric capacitor having a small leakage current and a small degradation in the process even when the size is reduced. The semiconductor device comprises: a semiconductor substrate; a semiconductor element formed in the semiconductor substrate; an insulating film covering the semiconductor element and formed above the semiconductor substrate; a lower insulative hydrogen diffusion preventing film formed above the insulating film and capable of blocking hydrogen and water; a conductive adhesion film formed above the insulative hydrogen diffusion preventing film; and a ferroelectric capacitor including a lower electrode formed above the conductive adhesion film, a ferroelectric film formed on the lower electrode and included in the lower electrode in a plan view, and an upper electrode formed on the ferroelectric film and included in the ferroelectric film in a plan view. The conductive adhesion film has functions of improving the adhesion of the lower electrode of the ferroelectric capacitor and reducing the leakage current of the ferroelectric capacitor.