NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

There is provided a nitride semiconductor light emitting device having a light reflecting layer capable of preventing lowering of reflectivity and lowering of the brightness due to the degradation of the quality of an active layer. A nitride semiconductor laser is provided, for example, on a substrate (1) and has at least a light emitting layer formation portion (3) provided on a first light reflecting layer (2) comprising low refractivity layers (21) and high refractivity layers (22) each having a different refractivity and alternately stacked on each other. The low refractivity layers (21) of the first light reflecting layer are formed with a single layer structure of an Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N layer (where, 0 = x = 1). The high refractivity layers (22) of the first light reflecting layer are formed with a multi-layer structure of an Al<SUB>y</SUB>Ga<SUB>1-y</SUB>N layer (where, 0 = y = 0.5 and y < X) OR AN IN<SUB>t</SUB>Ga<SUB>1-t</SUB>N layer (where, 0 < T = 0.5) AND AN IN<SUB>u</SUB>Ga<SUB>1-u</SUB>N layer (where, 0 < u = 1 and t < u).