| 摘要 |
A method for manufacturing a semiconductor device with a storage node is provided to prevent the contact between adjacent contacts by preventing the generation of cracks and peeled portions between an interlayer dielectric and an etch stop layer due to a heat treatment using a buffer insulating layer. An interlayer dielectric(220) having a storage node contact(210) is formed on a semiconductor substrate(200). A buffer insulating layer(300) is formed on the interlayer dielectric including the storage node contact. An etch stop layer(230) is formed on the buffer insulating layer. First and second mold insulating layers(241,242) are sequentially formed on the etch stop layer. A storage node contact hole is formed on the resultant structure by removing partially the first and second mold insulating layers.
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