发明名称 DEPOSITION OF LiCoO2
摘要 In accordance with the present invention, deposition of LiCoO<SUB>2 </SUB>layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO<SUB>2 </SUB>with a desired (101) or (003) orientation. Some embodiments of the deposition addresses the need for high rate deposition of LiCoO<SUB>2 </SUB>films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO<SUB>2 </SUB>layer. Some embodiments of the process can improve a battery utilizing the LiCoO<SUB>2 </SUB>layer by utilizing a rapid thermal anneal process with short ramp rates.
申请公布号 US2007125638(A1) 申请公布日期 2007.06.07
申请号 US20060557383 申请日期 2006.11.07
申请人 INFINITE POWER SOLUTIONS, INC. 发明人 ZHANG HONGMEI;DEMARAY RICHARD E.;SHAO MAY
分类号 C23C14/34;H01M4/02;H01M4/04;H01M4/131;H01M4/1391;H01M4/48;H01M4/485;H01M4/52;H01M4/525;H01M10/052;H01M10/0562;H01M10/0585;H01M10/36 主分类号 C23C14/34
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