发明名称 |
DEPOSITION OF LiCoO2 |
摘要 |
In accordance with the present invention, deposition of LiCoO<SUB>2 </SUB>layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO<SUB>2 </SUB>with a desired (101) or (003) orientation. Some embodiments of the deposition addresses the need for high rate deposition of LiCoO<SUB>2 </SUB>films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO<SUB>2 </SUB>layer. Some embodiments of the process can improve a battery utilizing the LiCoO<SUB>2 </SUB>layer by utilizing a rapid thermal anneal process with short ramp rates.
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申请公布号 |
US2007125638(A1) |
申请公布日期 |
2007.06.07 |
申请号 |
US20060557383 |
申请日期 |
2006.11.07 |
申请人 |
INFINITE POWER SOLUTIONS, INC. |
发明人 |
ZHANG HONGMEI;DEMARAY RICHARD E.;SHAO MAY |
分类号 |
C23C14/34;H01M4/02;H01M4/04;H01M4/131;H01M4/1391;H01M4/48;H01M4/485;H01M4/52;H01M4/525;H01M10/052;H01M10/0562;H01M10/0585;H01M10/36 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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