| 摘要 |
A method including introducing an implant of a dopant species into an active region of a device substrate, the dopant species comprising a conductivity type such that a conductivity of the implant is the same as a conductivity of a well of the active region wherein the introduction is aligned to junction regions of a device structure. An apparatus and system comprising an active device region of a substrate, the active device region comprising a well of a first conductivity, junction regions of a different second conductivity formed in the active region and separated by a channel and an implant of a dopant species in the well, the dopant species comprising a conductivity type such that a conductivity of the implant is the same as the first conductivity of the well and the implant is aligned to the junction regions.
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