发明名称 |
Method of manufacturing semiconductor integrated circuit devices |
摘要 |
To alleviate the absolute value control accuracy of phases in a mask having a groove shifter structure, transfer regions formed at different planar positions on the same plane of the same mask are subjected to a multiple exposure by scanning exposure. Although. identical mask patterns are formed over the transfer regions respective groove shifters provided to these mask patterns are arranged opposite from each other. |
申请公布号 |
US2007128556(A1) |
申请公布日期 |
2007.06.07 |
申请号 |
US20070651977 |
申请日期 |
2007.01.11 |
申请人 |
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发明人 |
HASEGAWA NORIO;IMAI AKIRA;HAYANO KATSUYA |
分类号 |
G03F1/00;H01L21/027;G03F1/08;G03F1/14;G03F1/30;G03F1/68;G03F7/00;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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