| 摘要 |
A non-volatile memory device and a writing method thereof are provided to prevent the generation of writing error to an unselected memory cell which does not perform a data write operation. A non-volatile memory device stores electrically programmable data. In the non-volatile memory device, a plurality of memory cell rows has a memory row by connecting sources and drains of a plurality of memory cell transistors in series. A plurality of word lines is connected to a gate of each memory cell transistor of the memory cell rows. A plurality of bit lines is connected to a contact point of the memory cell transistor of the memory cell rows in a direction approximately orthogonal to the memory row. A first drain selector(102) is connected to the bit line at a first interval, and selects a drain of the memory cell transistor. A second drain selector(104) is connected to the bit line at a half of the first interval and deviated from the first drain selector, and selects the drain of the memory cell transistor. A source selector(106) is connected to the bit line while the first and the second drain selector are connected, and selects a source of the memory cell transistor.
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