| 摘要 |
A method of fabricating a semiconductor integrated circuit device is disclosed. The method may include forming an etching target layer on a semiconductor substrate, forming a sacrificial mold layer on the etching target layer, forming a photoresist pattern of a first image on the sacrificial mold layer, patterning the sacrificial mold layer using the photoresist pattern of the first image as an etching mask to form sacrificial molds, removing the photoresist pattern of the first image, forming a mask which fills portions between the sacrificial molds and may be an inverse image of the first image and etching the sacrificial molds and the etching target layer using the mask as the etching mask.
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