| 摘要 |
Conventional capacitors constituted of a FET incur degradation in frequency response. A semiconductor integrated circuit includes a semiconductor substrate, an N-type FET, a P-type FET, and capacitors. The N-type FET includes N-type impurity diffusion layers, a P-type impurity-implanted region, a gate insulating layer, and a gate electrode. The P-type FET includes P-type impurity diffusion layers, an N-type impurity-implanted region, a gate insulating layer, and a gate electrode. The capacitor includes N-type impurity diffusion layers, an N-type impurity-implanted region, a capacitance insulating layer, and an upper electrode. The capacitor includes P-type impurity diffusion layers, a P-type impurity-implanted region, a capacitance insulating layer, and an upper electrode.
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