发明名称 |
NITRIDE-BASED TRANSISTORS AND FABRICATION METHODS WITH AN ETCH STOP LAYER |
摘要 |
A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer. |
申请公布号 |
WO2007018918(A3) |
申请公布日期 |
2007.06.07 |
申请号 |
WO2006US26952 |
申请日期 |
2006.07.12 |
申请人 |
CREE, INC.;SHEPPARD, SCOTT T.;MACKENZIE, ANDREW K.;ALLEN, SCOTT T.;SMITH, RICHARD P. |
发明人 |
SHEPPARD, SCOTT T.;MACKENZIE, ANDREW K.;ALLEN, SCOTT T.;SMITH, RICHARD P. |
分类号 |
H01L29/778;H01L21/335;H01L29/739;H01L29/78;H01L29/80 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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