发明名称 |
CONDUCTIVE LAYER FOR BIAXIALLY ORIENTED SEMICONDUCTOR FILM GROWTH |
摘要 |
A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
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申请公布号 |
WO2007044322(A3) |
申请公布日期 |
2007.06.07 |
申请号 |
WO2006US38586 |
申请日期 |
2006.09.29 |
申请人 |
LOS ALAMOS NATIONAL SECURITY, LLC;FINDIKOGLU, ALP, T.;MATIAS, VLADIMIR |
发明人 |
FINDIKOGLU, ALP, T.;MATIAS, VLADIMIR |
分类号 |
H01L27/01;C03C14/00 |
主分类号 |
H01L27/01 |
代理机构 |
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