| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a gate wiring from being damaged due to a metal film formation position shifted to a gate wiring side in a direct lead bonding semiconductor device. <P>SOLUTION: The direct lead bonding semiconductor device includes a semiconductor substrate, a surface electrode provided on the surface of the semiconductor substrate, a gate wiring provided on the surface of the semiconductor substrate along with the surface electrode, a metal film provided on the surface electrode, and a lead terminal provided on the metal film. The gate wiring is covered with a polyimide membrane and the metal film extends over the polyimide membrane. <P>COPYRIGHT: (C)2007,JPO&INPIT |
