| 摘要 |
PROBLEM TO BE SOLVED: To form a TEOS film with reduced adsorption of moisture and organic substances. SOLUTION: The TEOS film is formed on a principal plane of a semiconductor wafer 1W placed on a stage 53 by a plasma CVD method, including a step of supplying a mixture gas containing TEOS and oxygen (O<SB>2</SB>) to a reaction chamber 51. High-frequency power of 13.56 MHz and high-frequency power of 350 kHz is supplied to an electrode of a shower head 52 placed in the reaction chamber 51, where the flow rate ratio of the oxygen to TEOS is 3 or larger and smaller than 10. The film formation speed of the TEOS film is controlled to be 50 nm/min or higher and 150 nm/min or lower. COPYRIGHT: (C)2007,JPO&INPIT
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