| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced 1/f noise and leakage current and with reduced positional shift among a plurality of electrode patterns, and to provide a manufacturing method of the semiconductor device. SOLUTION: There are formed a first MOS semiconductor element, constituting an analog circuit at a first position on a semiconductor substrate 100, and a second MOS semiconductor element, constituting a digital circuit at a second position on the semiconductor substrate. The gate insulating film of the first MOS semiconductor element comprises a silicon oxide film 109, and a gate insulating film of the second MOS semiconductor element comprises a film having a silicon acid nitride film 105 and of a high dielectric thin film 107 formed on the silicon acid nitride film 105. COPYRIGHT: (C)2007,JPO&INPIT
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