| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an SOI substrate, which prevents the occurrence of voids inexpensively as compared with the installation of an organic matter removal filter by preventing the deposition of organic matters or particles onto the overlapped surface of a semiconductor substrate. SOLUTION: In a method of manufacturing the SOI substrate, a first semiconductor substrate 11 that becomes the SOI layer is overlapped to a second one 12 via an oxide film 11a to form a laminate 13. Relative humidity in atmosphere at a location, where the first and second semiconductor substrates 11, 12 before overlapping are cleaned and overlapped, is 46-60% by 25°C conversion. COPYRIGHT: (C)2007,JPO&INPIT
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