| 发明名称 |
Trench insulated gate field effect transistor |
| 摘要 |
The invention relates to a trench MOSFET with drain ( 8 ), drift ( 10 ) body ( 12 ) and source ( 14 ) regions. The drift region is doped to have a high concentration gradient. A field plate electrode ( 34 ) is provided adjacent to the drift region ( 10 ) and a gate electrode ( 32 ) next to the body region ( 12 ).
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| 申请公布号 |
US2007126055(A1) |
申请公布日期 |
2007.06.07 |
| 申请号 |
US20040580625 |
申请日期 |
2004.11.26 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
HUETING RAYMOND J.E.;HIJZEN ERWIN A. |
| 分类号 |
H01L29/94;H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L29/94 |
| 代理机构 |
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