PROGRAM CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT, VOLTAGE APPLICATION METHOD, CURRENT APPLICATION METHOD, AND COMPARISON METHOD

摘要

There is provided a program circuit that can reduce the impoverishment of a switching element using the oxidation-reduction reaction of an electrolytic material. A voltage source (106) applies a voltage to a switching element (100). A measurement circuit (107) measures a parameter that varies according to the resistance of the switching element (100). A control circuit (104) increases the voltage applied to the switching element (100) by the voltage source (106) until the parameter measured by the measurement circuit (107) reaches a predetermined value. When the parameter measured by the measurement circuit (107) reaches the predetermined value, the control circuit (104) commands the voltage source (106) to stop voltage application.