| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can fully remove heat generated by a semiconductor element. <P>SOLUTION: The semiconductor device comprises: a light emitting element with a length L in the longitudinal direction of 1 mm or more; and a base plate made of Cu-W or Cu-Mo with a top surface on which the light emitting element is mounted and a bottom surface located in the opposite side which has a thermal conductivity of 170 W/m×K or more. The ratio H/L is 0.3 or more where L is the principal plane length of the light emitting element in a longitudinal direction and H is a distance from the top surface on which the light emitting element is mounted to the bottom surface, a thermal expansion coefficient of the base plate is 5 to 12×10<SP>-6</SP>/K, and a thermal expansion coefficient of the light emitting element is 3 to 7×10<SP>-6</SP>/K. <P>COPYRIGHT: (C)2007,JPO&INPIT |
