发明名称 PHOTOELECTRIC CONVERTER AND ITS MANUFACTURING METHOD, AS WELL AS PHOTOVOLTAIC GENERATOR
摘要 <P>PROBLEM TO BE SOLVED: To increase light current to enhance conversion efficiency by means that short wavelength light and long wavelength light of visible light are confined with a porous oxide semiconductor layer and made to be efficiently absorbed. <P>SOLUTION: As for a photoelectric converter 1 in a die-sensitized type photoelectric converter 1 in which porous oxide semiconductor layers 3, 4 and an electrolyte layer 7 have been formed wherein the dye is carried on a conductive substrate 2, the porous oxide semiconductor layers 3, 4 are composed by laminating a plurality of layers of them, and arithmetic mean roughness of the surface or a surface of a breaking face of the porous oxide semiconductor 3 on the light incident side is smaller than that of the porous oxide semiconductor 4 at a light emitting site, and the thickness of the porous oxide semiconductor layer 3 on the light incident side is thicker than that of the porous semiconductor layer 4 on the light emitting side. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007141764(A) 申请公布日期 2007.06.07
申请号 JP20050337010 申请日期 2005.11.22
申请人 KYOCERA CORP 发明人 HIGUCHI HISASHI
分类号 H01M14/00;H01L31/04 主分类号 H01M14/00
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