| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a power-on power supply voltage detection circuit that reduces the temperature dependence of a threshold of p-type MOS transistors and variations in the thresholds of the p-type MOS transistors. <P>SOLUTION: The power-on power supply voltage detection circuit includes a diode D<SB>1</SB>, connected in series between a power supply voltage Vdd and a low voltage Vss that is lower than the power supply voltage Vdd; first and second resistors R<SB>1</SB>, R<SB>2</SB>; and the p-type MOS transistor Q1, whose gate receives a voltage VG1 at a connecting point between the first and second resistors R<SB>1</SB>, R<SB>2</SB>, whose source is connected to the power supply voltage Vdd via a third resistor R<SB>3</SB>, and whose drain is connected to the low voltage Vss via a fourth resistor R<SB>4</SB>. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
