| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress reduction in the intensity of diffracted light from a mask pattern when the pitch of the mask pattern narrows. <P>SOLUTION: A mask pattern covering film for covering a pattern formed on a mask base is provided which contains a silicone polymer, is transparent to an exposure wavelength and has a refractive index at the exposure wavelength in a range of 1.5-1.8. A mask pattern covering film material for covering a pattern formed on a mask base is also provided which contains a silicone polymer. The mask pattern covering film material preferably contains a crosslinking agent for crosslinking the silicone polymer and uses a crosslinkable polysilsesquioxane resin as the silicone polymer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
