| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a processing method of group III nitride semiconductor processible uniformly and at high speed on whole surface of group III nitride semiconductor. <P>SOLUTION: In chlorine containing gas atmosphere under the atmospheric pressure or near the atmospheric pressure, there are arranged a cylindrical rotating electrode 2 and a substrate stage 4 with an open spacing. Plasma 10 is generated between the cylindrical rotating electrode 2 and the substrate stage 4 by supplying high-frequency power to the cylindrical rotating electrode 2. A group III nitride semiconductor 6 is processed by bringing the surface of the group III nitride semiconductor 6 fixed to the substrate stage 4 via a first substrate holder 11 into contact with the region, where the distribution of the amount of surface processing is gently distributed in all the regions of the plasma 10 between the cylindrical rotating electrode 2 and the substrate stage 4. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
