SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of producing an integrated circuit with a high performance of an operation and reliability by preventing a wire breaking failure at a level difference and a contact failure without increasing a process number.

SOLUTION: To a cross-over portion of an interconnection, a photomask which is installed with an auxiliary pattern having an optical strength reduction functionality which comprises a grating pattern or a semi-transparent film, or a reticle is applied in a photolithography process for the interconnection formation, conductive layers used as the lower layer wiring of a two-layer structure are formed, the resist pattern is formed so that the lower layer comprises a first lower layer and a second lower layer having a wiring width shorter than that of the first lower layer, thereby the lower layer aiming at easing steep level difference is formed.

COPYRIGHT: (C)2007,JPO&INPIT