GROUP III NITRIDE CRYSTAL AND ITS PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride crystal in which the through-dislocation density is reduced by a crystal growth method using an alkali metal as a flux.

SOLUTION: The GaN crystal has a ground body 5 and GaN crystals 530,550. The ground body 5 is composed of a sapphire substrate 501 and a GaN film 502. The GaN film 502 has through-dislocations 5021. The GaN crystal 530 is grown on the GaN film 502 of the ground body 5 and comprises a plurality of domains 520 each having inclined facet 521. The GaN crystal 550 is formed on the GaN crystal 530 and comprises a plurality of domains 540.

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