| 摘要 |
PROBLEM TO BE SOLVED: To block the reflection of incident light and reduce a dark current in a solid-state imaging device. SOLUTION: The solid-state imaging device is provided with at least a silicon substrate 1, and a light receiving element 5 formed on the silicon substrate 1. It also has a reflection preventive film 7 which is formed of a plurality of layers including a first insulating film 3A made of a silicon oxide film and formed on the surface of a light receiving area in the light receiving element 5, and a silicon nitride film which is formed on the first insulating film 3A and has a different refractive index from that of the first insulating film 3A; and which reduces the reflection of incident light on the surface of the light receiving area. The silicon nitride film 7 has a concentration of hydrogen of 1×10<SP>22</SP>cm<SP>-3</SP>or more in the film because of the adoption of a single-wafer CVD device. COPYRIGHT: (C)2007,JPO&INPIT
|
