| 摘要 |
Etching method and system capable of deep etching with a large mask selection ratio and an excellent anisotropy. The etching system comprises a floating electrode sustained in potentially floating state while facing a substrate electrode provided in a vacuum chamber, a material for forming an etching protection film provided on the side of the floating electrode facing the substrate electrode, and a control means for applying high frequency power intermittently to the floating electrode. In the etching method, a sputter film is formed on the substrate by applying high frequency power to the floating electrode using the material for forming an etching protection film provided on the side facing the substrate electrode of the floating electrode disposed oppositely to the substrate electrode as a target material and using only rare gas as main gas. Subsequently, application of high frequency power to the floating electrode is interrupted, the substrate is etched by introducing etching gas into the vacuum chamber, and formation of the sputter film on the substrate and etching of the substrate are repeated according to a scheduled sequence (Fig. 1).
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