| 摘要 |
A semiconductor light emitting device having high reflectivity and a high electrical contact property between a light reflection layer and a semiconductor layer is provided. The semiconductor light emitting device is formed by laminating a semiconductor layer (20), a base layer (30) and a light reflection layer (31) in this order. The semiconductor layer is formed by laminating a buffer layer (21), a GaN layer (22), an n-type contact layer (23), an n-type cladding layer (24), an active layer (25), a p-type cladding layer (26) and a p-type contact layer (27) in this order. The base layer (30) is formed on a surface of the p-type contact layer (27), and is made of a transition metal with Ag (silver) with a thickness of 1 nm to 10 nm inclusive. The light reflection layer (31) is formed on a surface of the base layer (30), and is made of Ag with a predetermined material.
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