| 摘要 |
A semiconductor light emitting device having high reflectivity and a high electrical contact property between a light reflection layer (30) and a semiconductor layer is provided. The semiconductor light emitting device is formed by laminating a semiconductor layer, a light reflection layer (30) and a protective layer (31) on a substrate in this order. The semiconductor layer is formed by laminating a buffer layer (21), a GaN layer (22), an n-type contact layer (23), an n-type cladding layer (24), an active layer (25), a p-type cladding layer (26) and a p-type contact layer (27) in this order. The light reflection layer (30) is formed by depositing an Ag alloy on a surface of the p-type contact layer (27) while heating the substrate at, for example, a temperature from 100°C to less than 400°C. After the semiconductor layer, the light reflection layer (30) and the protective layer (31) are formed, the semiconductor layer, the light reflection layer (30) and the protective layer (31) are heated in a predetermined time range at an ambient temperature within a higher temperature range than a temperature range at the time of heating the substrate.
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